Semiconductor device and a method for forming a semiconductor device
AssigneeInfineon Technologies AG
InventorStefan Barzen
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Abstract
A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.
Claims21
A method for forming a semiconductor device, the method comprising:
- forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate, wherein the insulation trench structure laterally surrounds a portion of the semiconductor substrate;
- and
- modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material, wherein the alloy material is an alloy of the semiconductor substrate material and at least one metal.
A semiconductor device, comprising:
- a vertical electrically conductive structure extending from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate;
- wherein the vertical electrically conductive structure comprises an alloy material of a metal and a semiconductor substrate material of the semiconductor substrate,
- wherein an atomic percentage content of the semiconductor substrate material is greater than 30% of the alloy material.
Dependencies are inferred from the claim text.