Magnetic memory and method for writing data into magnetic memory element
AssigneesNEC Corporation, Tohoku University
InventorsRyusuke NEBASHI, Noboru SAKIMURA, Yukihide TSUJI, Ayuka TADA, Hideo OHNO
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AssigneesNEC Corporation, Tohoku University
InventorsRyusuke NEBASHI, Noboru SAKIMURA, Yukihide TSUJI, Ayuka TADA, Hideo OHNO
Estimating the term…
In order to stably write data into a magnetic memory that uses in-plane current-induced perpendicular switching of magnetization to write data, the magnetic memory includes a recording layer formed as a perpendicular magnetization film, an adjacent layer joined to an upper surface or a lower surface of the recording layer, an external magnetic field application part configured to apply a first external magnetic field to the recording layer in a first direction which is an in-plane direction of the recording layer, and a current application part configured to allow a write current to flow through the adjacent layer in the first direction or a second direction which is opposite to the first direction. The external magnetic field application part is configured to switch a direction of a second external magnetic field applied in a direction perpendicular to the first direction in accordance with a direction of the write current.
A magnetic memory, comprising:
A method of writing data into a magnetic memory element, the magnetic memory element including a recording layer formed as a perpendicular magnetic film and an adjacent layer joined to an upper surface or a lower surface of the recording layer, the method comprising:
A method of writing data into a magnetic memory element, the magnetic memory element including a recording layer formed as a perpendicular magnetic film and an adjacent layer joined to an upper surface or a lower surface of the recording layer, the method comprising:
Dependencies are inferred from the claim text.