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US 2017/0247790 A1Published application
High-Throughput System and Method for Post-Implantation Single Wafer Warm-Up
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsun-Jen Chan, Cheng-Hung Hu, Yi-Hann Chen, Kang Hua Chang, Ming-Te Chen
Life of this patent
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Abstract
A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.
Claims20
A system, comprising:
- an implantation chamber;
- a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber;
- a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber;
- and
- a second robotic arm configured to move a second wafer into the implantation chamber.
2 more elements
A system for fabricating a semiconductor wafer, the system comprising:
- an implantation chamber;
- a cooling chamber outside of the implantation chamber;
- a warming chamber adjacent to and outside of the implantation chamber;
- a first arm located in the implantation chamber and configured to reach into the warming chamber for a first transferring operation that moves a first wafer from the implantation chamber to the warming chamber;
- and
- a second arm configured for a second transferring operation that moves a second wafer from the cooling chamber to the implantation chamber.
3 more elements
A system for fabricating a semiconductor wafer, the system comprising:
- an implantation chamber configured to execute an implantation process;
- a cooling chamber outside of the implantation chamber, wherein a sidewall of the cooling chamber is part of a sidewall of the implantation chamber;
- a warming chamber configured to execute an warming process;
- a first transferring device configured to transfer a first semiconductor wafer from the implantation chamber to the warming chamber;
- a second transferring device configured to transfer a second semiconductor wafer from the cooling chamber to the implantation chamber;
- and
- a load lock outside of the warming chamber, wherein the first transferring device is also configured to transfer the first semiconductor wafer from the warming chamber to the load lock.
4 more elements
Dependencies are inferred from the claim text.