APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTAL

An apparatus for manufacturing an SiC single crystal by a solution growth method, comprising:

• a crucible made of graphite, the crucible including a side wall and capable of receiving an SiC solution;
• a seed shaft having a bottom end to which an SiC seed crystal can be attached, the seed shaft being capable of bringing the SiC seed crystal into contact with the SiC solution;
• a first induction heating coil disposed around the crucible, the first induction heating coil being located higher than a surface of the SiC solution when the SiC solution is received in the crucible;
• a second induction heating coil disposed around the crucible and located lower than the first induction heating coil;
• and
• a power supply for supplying a first alternating current to the first induction heating coil and supplying a second alternating current to the second induction heating coil, the second alternating current having the same frequency as the first alternating current and being in the direction opposite to that of the first alternating current,
• wherein, when the SiC solution is received in the crucible, D satisfies the following equation, Equation (1):
• D<2dm (1),
• where D is the distance between the surface of the SiC solution and the position in a portion of the side wall in contact with the SiC solution at which the strength of a magnetic field generated as the power supply supplies the first alternating current to the first induction heating coil and supplies the second alternating current to the second induction heating coil is at its maximum, and dm satisfies the following equation, Equation (2):
• [Formula 3]
• d
• m
• =
• ρ
• m
• π
• 
• 
• f
• 
• 
• μ
• m
• (
• 2
• )
• where ρm is the electric resistivity of the SiC solution, π is the ratio of the circumference of a circle to its diameter, f is said frequency, and μm is the magnetic permeability of the SiC solution.