Hydrogen plasma based cleaning process for etch hardware

A method for processing a substrate, comprising:

• etching a substrate positioned in a processing region of a process chamber, the substrate being positioned in conjunction with an edge ring comprising a catalyst, wherein etching the substrate deposits an anticatalytic material on the edge ring;
• removing the substrate from the processing region;
• forming a remote plasma using a etching gas mixture, the etching gas mixture comprising a hydrogen-containing precursor and a fluorine-containing precursor;
• and
• delivering the remote plasma to the edge ring in the processing region, wherein the remote plasma removes the anticatalytic material from the edge ring.

A device cleaning method, comprising:

• delivering a etching gas mixture to a plasma cavity of a process chamber, the process chamber having an edge ring, the edge ring comprising nickel and less than 5% titanium;
• forming a remote plasma using a etching gas mixture, the etching gas mixture comprising H2 and NF3, the ratio of the concentration of H2 to NF3 being at least a 3:1 ratio, wherein the antecedent of the ratio determines the minimum value;
• and
• delivering the remote plasma from the plasma cavity to a processing region of the process chamber, wherein the remote plasma removes the anticatalytic material from the edge ring.