Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsTakashi MAKINOSHIMA, Masatoshi ECHIGO
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Abstract
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
Claims20
A material for forming a film for lithography, comprising a compound represented by the following formula (1):
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
A resin obtained through a reaction of at least a compound represented by the following formula (1) with a compound having crosslinking reactivity.
- wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
Dependencies are inferred from the claim text.