Ceramic carrier and sensor element, heating element and sensor module, each with a ceramic carrier and method for manufacturing a ceramic carrier

A sensor module, the sensor module comprising:

• a ceramic carrier for reducing mechanical stresses, the carrier comprising
• an Al2O3 body;
• and
• a thin-film structure comprising platinum or a platinum alloy;
• wherein a surface of the carrier in a region of the thin-film structure is smoothed at least in portions for reducing an adhesion, or
• the surface of the carrier has an intermediate layer on which the thin-film structure is arranged, the intermediate layer comprising a coefficient of thermal expansion from 8*10−6/K to 16*10−6K, or
• the thin-film structure has at least one conductor track, the at least one conductor track being undular at least in portions and extending laterally along the surface of the carrier, wherein the amplitude of the undular conductor track is from 0.2*B to 2*B, and a wavelength of the undular conductor track is from 3*B to 10*B, where “B” is the width of the conductor track,
• a first cover layer comprises oxidic nanoparticles of Al2O3 or MgO and is applied directly to the thin-film structure, comprising a carrier as claimed in one of the preceding claims.

A method for making a ceramic carrier, the ceramic carrier for reducing mechanical stresses, the carrier comprising

• an Al2O3 body;
• and
• a thin-film structure comprising platinum or a platinum alloy;
• wherein a surface of the carrier in a region of the thin-film structure is smoothed at least in portions for reducing an adhesion, or
• the surface of the carrier has an intermediate layer on which the thin-film structure is arranged, the intermediate layer comprising a coefficient of thermal expansion from 8*10−6/K to 16*10−6K, or
• the thin-film structure has at least one conductor track, the at least one conductor track being undular at least in portions and extending laterally along the surface of the carrier, wherein the amplitude of the undular conductor track is from 0.2*B to 2*B, and a wavelength of the undular conductor track is from 3*B to 10*B, where “B” is the width of the conductor track, or
• a first cover layer comprises oxidic nanoparticles of Al2O3 or MgO and is applied directly to the thin-film structure;
• the method comprising:
• removing the surface of the carrier at least in the region of the thin-film structure by etching for smoothing, or
• applying the intermediate layer to the surface of the carrier by a thin-film method, or
• applying the undular conductor track to the surface of the carrier by the thin-film method.