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US 2016/0365705 A1Published application
Semiconductor nano/microlaser tuning by strain engineering
AssigneeSandia Corporation
InventorsGeorge T. Wang, Sheng Liu
Life of this patent
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Abstract
A method for tuning the lasing wavelength of a semiconductor nano/microlaser uses mechanical strain to change the bandgap of the semiconductor material and the lasing wavelength. The method enables broad, dynamic, and reversible spectral tuning of single nano/microlasers with subnanometer resolution.
Claims18
A method for tuning the lasing wavelength of a semiconductor nano/micro laser, comprising:
- providing a III-V or II-VI compound semiconductor nano/micro laser having a direct bandgap;
- and
- applying a mechanical strain to the semiconductor nano/microlaser to change the direct bandgap energy of the semiconductor and the lasing wavelength.
(canceled)
Dependencies are inferred from the claim text.