Resin-attached lead frame and semiconductor device

A resin-attached lead frame, comprising:

• a lead frame main body including an LED element resting portion and a lead portion disposed apart from the LED element resting portion, the lead frame main body further including an LED element resting region formed over an area including an upper surface of the LED element resting portion and an upper surface of the lead portion;
• and
• a reflecting resin section surrounding the LED element resting region of the lead frame main body;
• wherein
• a vapor-deposited aluminum layer or a sputtered aluminum layer is provided on an upper surface of the LED element resting region of the lead frame main body;
• and
• the vapor-deposited aluminum layer or the sputtered aluminum layer is formed on the lead frame main body via a bonding layer formed of a layer plated with silver.

A resin-attached lead frame, comprising:

• a lead frame main body including an LED element resting portion and a lead portion disposed apart from the LED element resting portion, the lead frame main body further including an LED element resting region formed over an area including an upper surface of the LED element resting portion and an upper surface of the lead portion;
• and
• a reflecting resin section surrounding the LED element resting region of the lead frame main body;
• wherein
• a vapor-deposited aluminum layer or a sputtered aluminum layer is provided on an upper surface of the LED element resting region of the lead frame main body;
• the vapor-deposited aluminum layer or the sputtered aluminum layer is further provided on an inner wall of the reflecting resin section;
• and
• the vapor-deposited aluminum layer or the sputtered aluminum layer is continuously formed from the upper surface of the LED element resting region to the inner wall of the reflecting resin section.

A semiconductor device, comprising:

• a lead frame main body including an LED element resting portion and a lead portion disposed apart from the LED element resting portion, the lead frame main body further including an LED element resting region formed over an area including an upper surface of the LED element resting portion and an upper surface of the lead portion;
• a reflecting resin section surrounding the LED element resting region of the lead frame main body;
• an LED element being rested on the LED element resting portion of the lead frame main body;
• an electric conductor electrically interconnecting the LED element and the lead portion of the lead frame main body;
• and
• a sealing resin sealing the LED element and the electric conductor;
• wherein
• a vapor-deposited aluminum layer or a sputtered aluminum layer is provided on an upper surface of the LED element resting region of the lead frame main body;
• and
• a non-through groove for enhancing adhesion between the lead frame main body and the reflecting resin section is formed along an outer edge of the LED element resting region on an upper surface of the lead frame main body.

A semiconductor device, comprising:

• a lead frame main body including an LED element resting portion and a lead portion disposed apart from the LED element resting portion, the lead frame main body further including an LED element resting region formed over an area including an upper surface of the LED element resting portion and an upper surface of the lead portion;
• a reflecting resin section surrounding the LED element resting region of the lead frame main body;
• an LED element being rested on the LED element resting portion of the lead frame main body;
• an electric conductor electrically interconnecting the LED element and the lead portion of the lead frame main body;
• and
• a sealing resin sealing the LED element and the electric conductor;
• wherein
• a vapor-deposited aluminum layer or a sputtered aluminum layer is provided on an upper surface of the LED element resting region of the lead frame main body;
• and
• the vapor-deposited aluminum layer or the sputtered aluminum layer is formed on the lead frame main body via a bonding layer formed of a layer plated with silver.

A semiconductor device, comprising:

• a lead frame main body including an LED element resting portion and a lead portion disposed apart from the LED element resting portion, the lead frame main body further including an LED element resting region formed over an area including an upper surface of the LED element resting portion and an upper surface of the lead portion;
• a reflecting resin section surrounding the LED element resting region of the lead frame main body;
• an LED element being rested on the LED element resting portion of the lead frame main body;
• an electric conductor electrically interconnecting the LED element and the lead portion of the lead frame main body;
• and
• a sealing resin sealing the LED element and the electric conductor;
• wherein
• a vapor-deposited aluminum layer or a sputtered aluminum layer is provided on an upper surface of the LED element resting region of the lead frame main body;
• the vapor-deposited aluminum layer or the sputtered aluminum layer is further provided on an inner wall of the reflecting resin section;
• and
• the vapor-deposited aluminum layer or the sputtered aluminum layer is continuously formed from the upper surface of the LED element resting region to the inner wall of the reflecting resin section.