Method for manufacturing high voltage led flip chip

A method for manufacturing a high voltage LED flip chip, comprising:

• providing a substrate, wherein the substrate comprises two or more regions, and the two or more regions comprise a first region where an upper electrode is to be formed and a second region where a lower electrode is to be formed;
• forming an epitaxy stacking layer on the substrate, wherein the epitaxy stacking layer comprises a first semiconductor layer, a second semiconductor layer and a quantum well layer between the first semiconductor layer and the second semiconductor layer;
• etching the epitaxy stacking layer to form at least one first groove in each of the two or more regions, wherein the first groove exposes the first semiconductor layer, and a remaining portion of the epitaxy stacking layer on each of the two or more regions forms a Mesa-platform;
• forming a first electrode on each of the Mesa-platforms, wherein an area between the first electrodes in two adjacent regions forms a second groove;
• forming a first insulation layer, wherein the first insulation layer covers the Mesa-platforms and the first electrodes, and the first insulation layer fills the second groove and fills the first grooves;
• etching the first insulation layer to form a third groove between two adjacent Mesa-platforms and at least one fourth groove in each of the two or more regions, wherein the third groove exposes a surface of the first semiconductor layer, and the at least one fourth groove exposes a surface of the first electrode;
• and
• forming an interconnection electrode, wherein the interconnection electrode comprises a first portion connecting the first semiconductor layer through the third groove in a particular region with the first electrode through the fourth groove in another region adjacent to the particular region.