Method of making a semiconductor device

Abstract

A method of making a semiconductor device includes: (a) providing a semiconductor substrate that is made from a material containing an element of boron group; (b) forming on the semiconductor substrate a buffer structure that includes an aluminum nitride buffer film formed using a physical vapor deposition technique; and (c) forming on the buffer structure a semiconductor unit that includes a GaN-based epitaxial layer, the GaN-based epitaxial layer having a hexagonal crystal structure and being formed using a chemical vapor deposition technique.

Dependencies are inferred from the claim text.