Ir photodetector using metamaterial-based on an antireflection coating to match the impedance between air and sp resonator

A method for manufacturing an infrared photodetector, comprising:

• forming a bottom contact layer on a substrate;
• forming a light absorption layer on the bottom contact layer;
• forming a top contact layer on the light absorption layer;
• forming a metal layer comprising a plurality of holes on the top contact layer to induce surface plasmon resonance;
• and
• forming a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency
• forming a bottom metal electrode on the bottom contact layer to provide Ohmic contact;
• and
• forming a top metal electrode on the top contact layer to provide Ohmic contact,
• wherein the dielectric layer is formed of benzocyclobutene (BCB) by a spin-coating process.