Structure and formation method of semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng CHANG, Chih-Han LIN
Life of this patent
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a protection element over the gate stack. A top of the protection element is wider than a bottom of the protection element. The semiconductor device structure also includes a spacer element over a side surface of the protection element and a sidewall of the gate stack. The semiconductor device structure further includes a conductive contact electrically connected to a conductive feature over the semiconductor substrate.
Claims21
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a protection element over the gate stack, wherein a top of the protection element is wider than a bottom of the protection element;
- a spacer element over a side surface of the protection element and a sidewall of the gate stack;
- and
- a conductive contact electrically connected to a conductive feature over the semiconductor substrate.
A semiconductor device structure, comprising:
- a fin structure over a semiconductor substrate;
- a gate stack over the fin structure;
- a protection element over the gate stack, wherein a top of the protection element is wider than a bottom of the protection element;
- a spacer element over a side surface of the protection element and a sidewall of the gate stack;
- and
- a conductive contact electrically connected to a source/drain feature over the fin structure.
16-20. (canceled)
A semiconductor device structure, comprising:
- a metal gate stack over a semiconductor substrate;
- a protection element over the gate stack, wherein the protection element becomes narrower along a direction from a top of the protection element towards the metal gate stack;
- a spacer element over a side surface of the protection element and a sidewall of the metal gate stack;
- and
- a conductive contact electrically connected to a conductive feature over the semiconductor substrate.
Dependencies are inferred from the claim text.