Fin field effect transistor (finfet) device structure with stop layer and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng CHANG, Chih-Han LIN
Life of this patent
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Abstract
A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.
Claims25
A fin field effect transistor (FinFET) device structure, comprising:
- a stop layer formed over a substrate;
- an isolation structure formed over the substrate;
- a fin structure formed over the stop layer;
- a gate structure formed over the fin structure and directly above the isolation structure;
- and
- a source/drain (S/D) structure adjacent to the gate structure, wherein a bottom surface of the S/D structure is in direct contact with a top surface the stop layer.
A fin field effect transistor (FinFET) device structure, comprising:
- a stop layer formed over a substrate;
- an isolation structure formed over the substrate, wherein a top surface of the stop layer is located at a position that is higher than a bottom surface of the isolation structure;
- a fin structure formed over the stop layer;
- a gate structure formed over the fin structure and directly above the isolation structure;
- and
- a source/drain (S/D) structure adjacent to the gate structure.
17-20. (canceled)
A fin field effect transistor (FinFET) device structure, comprising:
- a stop layer formed over a substrate;
- an isolation structure formed over the substrate, wherein the isolation structure is adjacent to the stop layer and where at least a portion of the stop layer is laterally coplanar with at least a portion of the isolation structure;
- a fin structure formed over the stop layer;
- a gate structure formed over the fin structure and directly above the isolation structure;
- and
- a source/drain (S/D) structure adjacent to the gate structure.
-27. (canceled)
Dependencies are inferred from the claim text.