Ga2O3 SEMICONDUCTOR ELEMENT
AssigneesTamura Corporation, National Institute of Information and Communications Technology
InventorsKohei Sasaki, Masataka Higashiwaki
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Abstract
A Ga2O3-based semiconductor element includes a β-Ga2O3 substrate including a first conductivity type, a first β-Ga2O3 single crystal film formed on the β-Ga2O3 substrate, a second β-Ga2O3 single crystal film including a second conductivity type formed on the first β-Ga2O3 single crystal film, a source electrode formed on the second β-Ga2O3 single crystal film, a drain electrode formed on a surface of the β-Ga2O3 substrate opposite to the first β-Ga2O3 single crystal film, and a gate electrode formed via a gate insulating film in a trench formed in the second β-Ga2O3 single crystal film.
Claims20
A Ga2O3-based semiconductor element, comprising:
- a β-Ga2O3 substrate comprising a first conductivity type;
- a first β-Ga2O3 single crystal film formed on the β-Ga2O3 substrate;
- a second β-Ga2O3 single crystal film comprising a second conductivity type formed on the first β-Ga2O3 single crystal film;
- a source electrode formed on the second β-Ga2O3 single crystal film;
- a drain electrode formed on a surface of the β-Ga2O3 substrate opposite to the first β-Ga2O3 single crystal film;
- and
- a gate electrode formed via a gate insulating film in a trench formed in the second β-Ga2O3 single crystal film.
A Ga2O3-based semiconductor element, comprising:
- a β-Ga2O3 substrate comprising a first conductivity type;
- a first β-Ga2O3 single crystal film comprising the first conductivity type formed on a main surface of the β-Ga2O3 substrate;
- a second β-Ga2O3 single crystal film comprising a second conductivity type formed on the first β-Ga2O3 single crystal film;
- a source electrode formed on the second β-Ga2O3 single crystal film;
- a drain electrode formed on a surface of the β-Ga2O3 substrate opposite to the first β-Ga2O3 single crystal film;
- and
- a gate electrode formed in the first β-Ga2O3 single crystal film and the second β-Ga2O3 single crystal film.
Dependencies are inferred from the claim text.