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AssigneesCommissariat à I'Énergie Atomique et aux Énergies Alternatives, Isorg
InventorsMohammed Benwadih, Jean-Marie Verilhac
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An electronic device which includes at least one optoelectronic component including a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode; and at least one first field effect transistor including a first semiconductor portion, a first gate, and at least one third layer, between the first gate and the first semiconductor portion. The third layer is made of the same material as the second layer. The electronic device includes a second electrode and a fourth interface layer between the first layer and the second electrode and includes a second field effect transistor that includes a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion. The fifth layer is made of the same material as the fourth layer.
An electronic device comprising at least one optoelectronic component comprising a first active layer, a first electrode, and a second interface layer between the first layer and the first electrode and at least one first field-effect transistor comprising a first semiconductor portion and a first gate and at least one third layer between the first gate and the first semiconductor portion, the third layer being made of the same material as the second layer, the electronic device comprising a second electrode and a fourth interface layer between the first layer and the second electrode and comprising a second field-effect transistor comprising a second semiconductor portion, a second gate, and at least one fifth layer between the second gate and the second semiconductor portion, the fifth layer being made of the same material as the fourth layer.
Dependencies are inferred from the claim text.