Electronic device
AssigneeSK hynix Inc.
InventorKyung-Wan KIM
Life of this patent
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Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a vertical electrode formed over a substrate; a plurality of first memory elements and a plurality of first interlayer dielectric layers alternately stacked along a first side surface of the vertical electrode; and a plurality of second memory elements and a plurality of second interlayer dielectric layers alternately stacked along a second side surface of the vertical electrode, and the plurality of first memory elements correspond to the plurality of second interlayer dielectric layers, respectively, in the vertical direction.
Claims18
An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
- a vertical electrode disposed over a substrate and extending in a first direction;
- a plurality of first memory elements and a plurality of first interlayer dielectric layers, wherein a first memory element and a first interlayer dielectric layer are alternately stacked along a first side surface of the vertical electrode;
- and
- a plurality of second memory elements and a plurality of second interlayer dielectric layers, wherein a second memory element and a second interlayer dielectric layer are alternately stacked along a second side surface of the vertical electrode,
- wherein the plurality of first memory elements are disposed to correspond to the plurality of second interlayer dielectric layers, respectively, in a second direction with respect to the vertical electrode, the second direction being perpendicular to the first direction.
Dependencies are inferred from the claim text.