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US 2016/0365380 A1Published application
Photodiode with Different Electric Potential Regions for Image Sensors
AssigneeApple Inc.
InventorChung Chun Wan
Life of this patent
Estimating the term…
Abstract
An image sensor pixel is disclosed. The pixel may include a photodiode having a first region with a first potential and a second region with a second, higher potential, with the second region being offset in depth from the first region in a semiconductor chip. A storage node may be positioned at substantially the same depth as the second region of the photodiode. A storage gate may be operable to transfer charge between the photodiode and the storage node.
Claims21
1-20. (canceled)
An image sensor pixel comprising:
- a photosensitive region formed along a surface of a semiconductor chip;
- a storage node below and at least partially overlapping with the photosensitive region;
- and
- a second region configured to transfer charge from the photosensitive region to the storage node.
1 more element
An image sensor comprising:
- a photodiode having a first region formed along a surface of a semiconductor chip and a second region formed below a portion of the first region;
- a storage node formed in the semiconductor chip at a depth below and at least partially overlapping with the first region;
- and
- a storage gate configured to pump a charge from the second region to the storage node.
1 more element
An image pixel comprising:
- a photodiode having a first region positioned along a first surface of a semiconductor chip and a second region positioned below a portion of the first region;
- a storage node positioned proximate to a second surface of the semiconductor chip opposite to the first surface and at least partially overlapping the first region of the photodiode.
Dependencies are inferred from the claim text.