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US 2016/0365375 A1Published application
Image sensor having vertical transfer gate and method for fabricating the same
AssigneeSK hynix Inc.
InventorsKyung-Dong YOO, Sun-Ha HWANG, Sung-Bo HWANG
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Abstract
The present disclosure provides an image sensor. An image sensor may include: a transfer gate formed over a first substrate, and having a through-hole; a column-shaped epitaxial body having a first portion filled in the through-hole and a second portion formed over the transfer gate; a photoelectric conversion element formed in the second portion of the epitaxial body; and a floating diffusion region formed in the first substrate, and contacting the first portion of the epitaxial body.
Claims40
An image sensor comprising:
- a transfer gate formed over a first substrate, and having a through-hole;
- a column-shaped epitaxial body having a first portion filled in the through-hole and a second portion formed over the transfer gate;
- a photoelectric conversion element formed in the second portion of the epitaxial body;
- and
- a floating diffusion region formed in the first substrate, and contacting the first portion of the epitaxial body.
2 more elements
A method for fabricating an image sensor, comprising:
- forming over a first substrate a transfer gate having a through-hole;
- forming a column-shaped epitaxial body by selective epitaxial growth from the first substrate exposed through the through-hole, wherein the epitaxial body has a first portion filled in the through-hole and a second portion formed over the transfer gate;
- forming a photoelectric conversion element in the second portion of the epitaxial body;
- and
- forming a floating diffusion region contacting the first portion of the epitaxial body in the first substrate.
2 more elements
Dependencies are inferred from the claim text.