US 2016/0365361 A1 · THIN FILM TRANSISTOR, PIXEL STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE

Abstract

A thin film transistor, a pixel structure, an array substrate, a display device, a method for manufacturing a thin film transistor, and a method for manufacturing a pixel structure are disclosed. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, wherein a first passivation layer made from an aluminum oxide material is provided on the source electrode and the drain electrode, and an active layer made from an aluminum oxide material doped with ions is provided in a region of the first passivation layer corresponding to the gate electrode. Since the first passivation layer as insulation material is doped with the ions to form an active layer, the etching stop layer may be omitted, thereby simplifying the structure of the thin film transistor.

Claims22

Dependent claims

A thin film transistor, comprising a gate electrode, a source electrode and a drain electrode, wherein a first passivation layer made from an aluminum oxide material is provided on the source electrode and the drain electrode, and an active layer made from an aluminum oxide material doped with ions is provided in a region of the first passivation layer corresponding to the gate electrode.

A method for manufacturing a pixel structure, comprising a step of forming a switching thin film transistor and a driving thin film transistor on a substrate, wherein the step of forming the switching thin film transistor and the driving thin film transistor on the substrate comprises steps of:

forming a first passivation layer from an aluminum oxide material on source electrodes and drain electrodes of the switching thin film transistor and the driving thin film transistor;
and
forming active layers of the switching thin film transistor and the driving thin film transistor by doping with ions on regions of the first passivation layer corresponding to respective gate electrodes of the switching thin film transistor and the driving thin film transistor, respectively.

Dependencies are inferred from the claim text.

Facts

Application

15/120,736Filed 8 Sep 2015

Priority

CN 201510059734.14 Feb 2015

Published

15 Dec 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification20 codes

H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
H10D 30/67
Insulated-gate field-effect transistors [IGFET]: thin-film transistors [TFT]
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 30/6757
Thin-film transistors [TFT]: characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Thin film transistor, pixel structure, and method for manufacturing the same, array substrate and display device

Life of this patent

Thin film transistor, pixel structure, and method for manufacturing the same, array substrate and display device

Life of this patent

Abstract

Claims22