Manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTomonori AOYAMA
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Abstract
In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a first film on an inner wall of a hole in a stack on a substrate, forming a polycrystalline silicon film on the first film, and conducting a thermal annealing treatment in an atmosphere of ozone or oxygen radical to reduce defects in an interface between the first film and the polycrystalline silicon film. In the stack second films and third films are repeatedly stacked on the substrate in this order more than once.
Claims10
A manufacturing method of a semiconductor device comprising:
- forming a first film on an inner wall of a hole in a stack in which second films and third films are repeatedly stacked on a substrate in this order more than once;
- forming a polycrystalline silicon film on the first film;
- conducting a thermal annealing treatment in an atmosphere of ozone or oxygen radical to reduce defects in an interface between the first film and the polycrystalline silicon film.
A manufacturing method of a semiconductor device comprising:
- forming a first film on the inner wall of a hole provided in a stack in which second films and third films are repeatedly stacked on a substrate in this order more than once;
- forming an amorphous silicon film on the first film;
- subjecting the amorphous silicon film to a thermal annealing treatment to form a polycrystalline silicon film;
- and
- subjecting the polycrystalline silicon film to a thermal annealing treatment in an atmosphere of ozone or oxygen radical at a temperature less than or equal to the temperature of the former thermal annealing treatment after the former thermal annealing treatment.
A manufacturing method of a semiconductor device comprising:
- forming a first film and a polycrystalline silicon film on the first film on the inner wall of a hole provided in a stack in which second films and third films are repeatedly stacked on a substrate in this order more than once;
- and
- subjecting the polycrystalline silicon film to a microwave annealing treatment in an oxygen atmosphere.
Dependencies are inferred from the claim text.