Self-aligned low defect segmented iii-v finfet
AssigneeInternational Business Machines Corporation
InventorEffendi Leobandung
Life of this patent
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Abstract
A method includes forming one or more fin structures on a substrate, the one or more fin structures comprising a first material comprising a first lattice structure and the substrate comprising a second material comprising a second lattice structure. Forming the one or more fin structures on the substrate includes forming one or more trenches in the substrate, and growing the first material in the one or more trenches. The first lattice structure is different from the second lattice structure. The one or more fin structures are self-aligned by the one or more trenches.
Claims20
A method, comprising:
- forming one or more fin structures on a substrate, the one or more fin structures comprising a first material comprising a first lattice structure and the substrate comprising a second material comprising a second lattice structure;
- wherein forming the one or more fin structures on the substrate comprises:
- forming one or more trenches in the substrate;
- and
- growing the first material in the one or more trenches;
- wherein the first lattice structure is different from the second lattice structure;
- and
- wherein the one or more fin structures are self-aligned by the one or more trenches.
A semiconductor structure, comprising:
- one or more fin structures formed on a substrate, the one or more fin structures comprising a first material comprising a first lattice structure and the substrate comprising a second material comprising a second lattice structure;
- wherein forming the one or more fin structures on the substrate comprises:
- forming one or more trenches in the substrate;
- and
- growing the first material in the one or more trenches;
- wherein the first lattice structure is different from the second lattice structure;
- and
- wherein the one or more fin structures are self-aligned by the one or more trenches.
An integrated circuit, comprising:
- one or more semiconductor structures, wherein each of the one or more semiconductor structures comprise:
- one or more fin structures formed on a substrate, the one or more fin structures comprising a first material comprising a first lattice structure and the substrate comprising a second material comprising a second lattice structure;
- wherein forming the one or more fin structures on the substrate comprises:
- forming one or more trenches in the substrate;
- and
- growing the first material in the one or more trenches;
- wherein the first lattice structure is different from the second lattice structure;
- and
- wherein the one or more fin structures are self-aligned by the one or more trenches.
Dependencies are inferred from the claim text.