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US 2016/0365282 A1Published application
Carbon Layer and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMark van Dal
Life of this patent
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Abstract
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate comprising carbon. A silicide is epitiaxially grown on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide. In an embodiment the carbon layer is graphene, and may be transferred to a semiconductor substrate for further processing to form a channel within the graphene.
Claims20
A method comprising:
- performing a first anneal on a substrate, the substrate having a metal layer adjacent a carbon-containing layer, the first anneal forming a metal-containing compound layer and a graphene layer;
- after performing the first anneal, transferring the graphene layer to a device substrate, graphite not being formed prior to the transferring;
- and
- forming an active device on the device substrate, the graphene layer forming a conductive layer of the active device.
1 more element
A method comprising:
- forming a graphene layer on a carrier substrate;
- transferring the graphene layer to a device substrate, graphite not being formed before the transferring;
- forming a gate electrode proximate the graphene layer on the device substrate;
- and
- forming a first contact and a second contact to the graphene layer on the device substrate, the first contact and the second contact being on opposite sides of the gate electrode.
2 more elements
A method comprising:
- reacting a metal with a carbon-containing substrate, the reacting forming a metal silicide and a graphene layer;
- attaching the graphene layer to a device substrate, graphite not being formed before the attaching;
- and
- forming an active device on the device substrate, the graphene layer being a conductive layer of the active device.
1 more element
Dependencies are inferred from the claim text.