Substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsAkao TOKUNOBU, Tomoshi TANIYAMA
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AssigneeHitachi Kokusai Electric Inc.
InventorsAkao TOKUNOBU, Tomoshi TANIYAMA
Estimating the term…
The present invention provides a technique in which a reduction in yield rate caused by particles occurring in the processing furnace is suppressed. The technique includes a substrate processing apparatus comprising a transfer chamber including a gas supply mechanism on a side surface thereof and configured to transfer a substrate to a substrate holder, a processing furnace, a furnace opening, a cap having the substrate holder placed thereon and configured to close the furnace opening, a raising/lowering mechanism configured to raise and lower the cap, a measurer installed at a position facing the gas supply mechanism in the transfer chamber with the substrate holder interposed therebetween, and configured to count a number of particles at the furnace opening, and a control unit configured to control the raising/lowering mechanism and the measurer so as to start measurement of a number of particles by the measurer when the furnace opening is opened.
A substrate processing apparatus comprising:
A substrate processing apparatus comprising:
Dependencies are inferred from the claim text.