Plasma etching device with doped quartz surfaces
OwnerSanket SANTinventor
Life of this patent
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Abstract
An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. An edge ring is on the substrate support, wherein the edge ring comprises nitrogen free doped quartz with a dopant of either AlO and YO or a dopant of LaO. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. At least one electrode provides RF power into the processing chamber.
Claims17
An apparatus for processing a substrate, comprising
- a processing chamber;
- a substrate support for supporting the substrate within the processing chamber;
- an edge ring on the substrate support, wherein the edge ring comprises nitrogen free doped quartz with a dopant of either AlO and YO or a dopant of LaO;
- a gas inlet for providing gas into the processing chamber above a surface of the substrate;
- and
- at least one electrode, for providing RF power into the processing chamber.
An edge ring for use in a plasma processing chamber comprising a nitrogen free doped quartz ring with a dopant of either AlO and YO or a dopant of LaO.
An edge ring for use in a plasma processing chamber comprising a doped quartz ring.
An apparatus for processing a substrate, comprising a processing chamber;
- a substrate support for supporting the substrate within the processing chamber;
- an edge ring on the substrate support, wherein the edge ring comprises a doped quartz;
- a gas inlet for providing gas into the processing chamber above a surface of the substrate;
- and
- at least one electrode, for providing RF power into the processing chamber. The edge ring, as recited in claim 16, wherein the doped quartz ring is a nitrogen free doped quartz ring.
Dependencies are inferred from the claim text.