Modification of Electrical Properties of Topological Insulators
AssigneeSandia Corporation
InventorPeter Anand Sharma
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Abstract
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
Claims13
A method to modify the electrical properties of a topological insulator, comprising:
- providing a topological insulator having finite bulk conductivity due to bulk charge carriers;
- and
- ion implanting the topological insulator with a dopant that compensates for the bulk charge carriers.
A method to modify the electrical properties of a topological insulator, comprising:
- providing a topological insulator having finite bulk conductivity due to bulk charge carriers;
- and
- depositing a dopant film on a surface of the topological insulator and annealing the dopant film and topological insulator for a sufficient time and temperature to compensate the bulk charge carriers.
Dependencies are inferred from the claim text.