Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a first supply system configured to supply a first precursor to the substrate in the process chamber, the first precursor containing a predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen;
• a second supply system configured to supply a second precursor containing the predetermined element and not containing the ligand to the substrate in the process chamber;
• a third supply system configured to supply a ligand desorption material to the substrate in the process chamber;
• and
• a control part configured to control the first supply system, the second supply system, and the third supply system to perform in the process chamber:
• forming a seed layer containing the predetermined element on the substrate by performing a process a predetermined number of times, the process including alternately performing:
• supplying the first precursor to the substrate to form an adsorption layer of the first precursor, and
• supplying the ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor;
• and
• supplying the second precursor to the substrate to form a film containing the predetermined element on the seed layer.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process, the process comprising:

• forming a seed layer containing a predetermined element on a substrate by performing a sequence a predetermined number of times, the sequence including alternately performing:
• supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and
• supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor;
• and
• supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer.