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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsKazunori HAGIMOTO, Masaru SHINOMIYA, Keitaro TSUCHIYA, Hirokazu GOTO, Ken SATO, Hiroshi SHIKAUCHI, Shoichi KOBAYASHI, Hirotaka KURIMOTO
Estimating the term…
A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including epitaxially growing a semiconductor layer on the silicon-based substrate after applying terrace processing to an outer peripheral portion of the silicon-based substrate. As a result, the method of manufacturing the epitaxial wafer having the epitaxial layer on the silicon-based substrate in which an epitaxial wafer which is completely free from cracks can be obtained, is provided.
1-10. (canceled)
A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer comprising:
A silicon-based substrate for epitaxial growth for epitaxially growing a semiconductor layer, the silicon-based substrate for epitaxial growth comprising:
Dependencies are inferred from the claim text.