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US 2016/0365153 A1Published application
Nonvolatile semiconductor memory device which performs improved erase operation
AssigneeKabushiki Kaisha Toshiba
InventorsJun NAKAI, Noboru SHIBATA
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control unit. The memory cell array includes a plurality of memory cells arranged in a matrix. The control unit erases data of the memory cells. The control unit interrupts the erase operation of the memory cells and holds an erase condition before the interrupt in accordance with a first command during the erase operation, and resumes the erase operation based on the held erase condition in accordance with a second command.
Claims1
A nonvolatile semiconductor memory device comprising:
- a memory cell array including a plurality of blocks, each of the blocks which contains a plurality of memory cells;
- and
- a control unit configured to erase data of the memory cells contained in an erase block selected from the blocks,
- wherein the control unit interrupts an erase operation of the memory cells and holds an erase condition before the interruption in accordance with a first command during the erase operation, and resumes the erase operation based on the held erase condition in accordance with a second command.
1 more element
Dependencies are inferred from the claim text.