Apparatuses, devices and methods for sensing a snapback event in a circuit

A device comprising:

• an array of memory cells, including a first memory cell coupled to a bit line node and a word line node;
• a switching circuit to apply an electric potential to the first memory cell, wherein, with the first memory cell in a first state, the first memory cell generates a snapback event in response to the electric potential;
• a sense node coupled to one of the bit line node or the word line node;
• a limiting circuit to establish a voltage level at the sense node that is greater than a threshold sensed voltage level in response to an increase in an electric current through the first memory cell following the snapback event;
• and
• a sense circuit to initiate a change of the electric potential in response to the voltage level exceeding the threshold sensed voltage level.