Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate

A silicon carbide epitaxial substrate, comprising:

• a silicon carbide single crystal substrate having a main surface inclined relative to a {0001} plane by more than or equal to 1° and less than or equal to 8° ;
• and
• an epitaxial layer formed on the silicon carbide single crystal substrate,
• in a surface of the epitaxial layer, trapezoidal defects, which are trapezoidal depressions, having a defect density of less than or equal to 1/cm2,
• the trapezoidal defects each including an upper base portion and a lower base portion intersecting with a <11-20> direction when viewed in plan view,
• the upper base portion having a width of more than or equal to 0.1 μm and less than or equal to 100 μm,
• the lower base portion having a width of more than or equal to 50 μm and less than or equal to 5000 μm,
• the upper base portion including a protruding portion,
• the lower base portion including a plurality of step bunchings.

A silicon carbide epitaxial substrate, comprising:

• a silicon carbide single crystal substrate having a main surface inclined relative to a {0001} plane by more than or equal to 1° and less than or equal to 8° and having a diameter of more than or equal to 100 mm;
• and
• an epitaxial layer formed on the silicon carbide single crystal substrate and having a thickness of more than or equal to 5 μm and less than or equal to 30 μm,
• in a surface of the epitaxial layer, trapezoidal defects, which are trapezoidal depressions, having a defect density of less than or equal to 1/cm2,
• the trapezoidal defects each including an upper base portion and a lower base portion intersecting with a <11-20> direction when viewed in plan view,
• the upper base portion having a width of more than or equal to 0.1 μm and less than or equal to 100 μm,
• the lower base portion having a width of more than or equal to 50 μm and less than or equal to 5000 μm,
• the upper base portion including a protruding portion,
• the lower base portion including a plurality of step bunchings.