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AssigneeClemson University
InventorsJoseph W. Kolis, Colin D. McMillen, J. Matthew Mann
Estimating the term…
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
A method for forming a monolithic heterogeneous crystal comprising heating and pressurizing an aqueous solution held within a reactor to develop a temperature differential between a first zone of the reactor and a second zone of the reactor, the reactor containing a garnet forming feedstock in the first zone and a garnet seed crystal in the second zone, the feedstock forming the same garnet as the garnet of the seed crystal, the feedstock including a source for a saturable absorber ion, wherein upon said heating and pressurizing growth of a garnet Q-switch crystal region is initiated on the garnet seed crystal to form a monolithic garnet product crystal, the composition of the Q-switch crystal region differing from the composition of the seed crystal such that the monolithic garnet product crystal is heterogeneous.
Dependencies are inferred from the claim text.