Structure with an improved capacitor

A Metal-Insulator-Metal type capacitor structure comprising:

• a substrate,
• a first electrically insulating layer placed on the substrate,
• a lower electrode placed on the first electrically insulating layer,
• a layer of metal placed on the lower electrode and structured by a plurality of pores, said pores being electrically insulated by a peripheral oxide layer from the rest of the structured metal layer in which they are produced, to form a pore insulating matrix,
• a capacitor of Metal-Insulator-Metal type comprising a first conductive layer placed on the structured metal layer and inside the pores of said structured metal layer, a dielectric layer covering the first conductive layer, a second conductive layer covering the dielectric layer, each relevant pore comprising the first conductive layer and the second conductive layer separated by the dielectric layer,
• an upper electrode placed on the Metal-Insulator-Metal type capacitor,
• a second electrically insulating layer placed on the upper electrode, wherein:
• the first conductive layer situated inside the pores of the structured metal layer is in contact with the lower electrode, and
• the second conductive layer situated inside the pores of the structured metal layer is in contact with the upper electrode.