Level shifter and non-volatile memory device using the same

A non-volatile memory device, comprising:

• a level shifter comprising
• a first level shifter configured to output an intermediate signal between a high voltage and a low voltage, wherein the high voltage is a positive supply voltage or a positive voltage and the low voltage is a negative supply voltage, to an intermediate signal node and an inverted intermediate signal node, and
• a second level shifter configured to receive the intermediate signal and output a low voltage, by converting the intermediate signal into a negative supply voltage or a negative voltage, through an output terminal and an inverted output terminal,
• wherein the second level shifter comprises a P-type transistor with a body connected to the intermediate signal node or the inverted intermediate signal node;
• a charge pump configured to provide a positive supply voltage or a positive voltage to the level shifter power supply terminal;
• a controller configured to control the level shifter and the charge pump;
• and
• a non-volatile memory cell configured to conduct reading, programming and erasing according to the output of the level shifter.