US 2016/0261109 A1 · METHOD TO PROTECT SENSITIVE DEVICES FROM ELECTROSTATIC DISCHARGE DAMAGE

Abstract

ESD protection circuitry that includes one, or more, of the following features, characteristics and/or advantages: (i) use of different “diode types” (for example, Schottky type, PN type, p-type diode-connected field-effect transistor (FET) type, NFET type)) in a series-connected diode set (connected in series with respect to a device-under-protection) and a parallel-connected diode set (connected in parallel with respect to a device-under-protection and the series-connected diode set); (ii) a FET is connected in series with a target device such that the FET's gate can be turned on during normal operation and the FET's gate is resistively coupled to the FET's source; and/or (iii) two FETs are connected in series with a target device such both FETs gates can be turned on during normal operation, one FET's gate is resistively coupled to its source, and the other FET's gate is electrically coupled to its drain.

Claims20

Dependent claims

Electrostatic discharge (ESD) protection circuitry comprising:

a target device;
a series-connected diode(s) set including one, or more, diode(s);
and
a parallel-connected diode(s) set including one, or more, diodes;
wherein:
the series-connected diode(s) set is electrically connected in series with the target device;
the parallel-connected diode(s) set is electrically connected in parallel with a circuit element formed by the series-connected diode(s) set and the target device;
and
the diode type of at least one diode of the series-connected diode(s) set is different from the diode type of at least one of the parallel-connected diode(s) set.

6 more elements

Electrostatic discharge (ESD) protection circuitry for protecting a magnetoresistive (MR) sensor from electrostatic events, the ESD protection circuitry comprising:

a first series-connected field-effect transistor (FET), the first-series connected FET including a gate, a source and a drain where the source of the first series-connected FET is connected to the top lead of the MR sensor;
a second series-connected field-effect transistor (FET), the second-series connected FET including a gate, a source and a drain where the source of the second series-connected FET is connected to the drain of the first series-connected FET;
and
control circuitry;
wherein:
the first series-connected FET is adapted to be electrically connected in series with the MR sensor;
and
the control circuitry is structured, connected and/or programmed to turn on the gate of the first series-connected FET during operation of the MR sensor;
the gate of the first series-connected FET is electrically connected to the source of the first series-connected FET;
the second series-connected FET is adapted to be electrically connected in series with the MR sensor;
the control circuitry is further structured, connected and/or programmed to turn on the gate of the second series-connected FET during operation of the MR sensor;
and
the gate of the second series-connected FET is electrically connected to the drain of the second series-connected FET.

10 more elements

Dependencies are inferred from the claim text.

Method to protect sensitive devices from electrostatic discharge damage

Life of this patent

Method to protect sensitive devices from electrostatic discharge damage

Life of this patent

Abstract

Claims20