Temperature insensitive laser
AssigneeHuawei Technologies Co., Ltd.
InventorsMartijn Tassaert, Marco Lamponi, Tom Collins
Life of this patent
Estimating the term…
Abstract
The invention relates to a temperature insensitive semiconductor laser, comprising: a gain region for generating laser radiation; a reflector region for reflecting the laser radiation generated in the gain region, and a waveguide for guiding the laser radiation generated in the gain region to the reflector region and for guiding the laser radiation reflected in the reflector region to the gain region, wherein the gain region, the reflector region and the waveguide define a resonating cavity of the semiconductor laser and wherein the waveguide is substantially athermal.
Claims16
A semiconductor laser, comprising:
- a gain region for generating laser radiation;
- a reflector region for reflecting the laser radiation generated in the gain region;
- and
- a waveguide for guiding the laser radiation generated in the gain region to the reflector region and for guiding the laser radiation reflected in the reflector region to the gain region, wherein the gain region, the reflector region and the waveguide define a resonating cavity of the semiconductor laser and wherein the waveguide is substantially athermal.
Dependencies are inferred from the claim text.