Methods of Forming a Non-Volatile Resistive Oxide Memory Cell and Methods of Forming a Non-Volatile Resistive Oxide Memory Array

A method of forming a non-volatile resistive oxide memory array, comprising:

• forming a plurality of one of conductive word lines or conductive bit lines over a substrate;
• forming multi-resistive state metal oxide-comprising material over the one of conductive word lines or conductive bit lines;
• depositing etch stop material over the multi-resistive state metal oxide-comprising material;
• depositing damascene template material over the etch stop material;
• etching a series of elongated trenches into the damascene template material to the etch stop material over the plurality of said one of word lines or bit lines to stop relative to the etch stop material, the trenches running generally parallel an outer major surface of the substrate, the trenches being angled relative to the plurality of said one of word lines or bit lines;
• after etching said elongated trenches to stop relative to the etch stop material, etching through the etch stop material within the elongated trenches to the multi-resistive state metal oxide-comprising material;
• after etching through the etch stop material within the elongated trenches to the multi-resistive state metal oxide-comprising material, depositing conductive material to within the elongated trenches over the multi-resistive state metal oxide-comprising material and the one of conductive word lines or conductive bit lines, and forming a plurality of the other of conductive word lines or conductive bit lines from the conductive material;
• and
• providing said multi-resistive state metal oxide-comprising material between said one of word lines or bit lines and said other of word lines or bit lines to form individually programmable junctions where the word lines and bit lines cross one another.

A method of forming a non-volatile resistive oxide memory cell, comprising:

• forming a first conductive electrode of the memory cell as part of a substrate;
• forming metal oxide-comprising material over the first conductive electrode;
• depositing etch stop material over the metal oxide-comprising material;
• depositing damascene template material over the etch stop material;
• etching an opening through the damascene template material to the etch stop material over the first electrode to stop relative to the etch stop material;
• etching through the etch stop material within the opening to the metal oxide-comprising material while retaining laterally extending regions of the etch stop material, at least a portion of the laterally extending regions being retained in a final memory cell structure;
• depositing conductive material to within the opening over the metal oxide-comprising material.