Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;
• a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;
• a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes;
• and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;
• an upper electrode provided on the non-conductive reflective film;
• and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode.