Group iii nitride semiconductor light-emitting device and production method therefor

Abstract

There is provided a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed to be captured by threading dislocation, and a production method therefor. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer on the n-type semiconductor layer, a p-type semiconductor layer on the light-emitting layer. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. The n-type semiconductor layer includes an n-side electrostatic breakdown preventing layer. The n-side electrostatic breakdown preventing layer comprises an n-type GaN layer containing starting point of the pits, and an ud-GaN layer disposed adjacent to the n-type GaN layer and containing a part of the pits. At least one of the n-type GaN layer and the ud-GaN layer has an In-doped layer. The In composition ratio of the In-doped layer is more than 0 and not more than 0.0035.

Dependencies are inferred from the claim text.