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US 2016/0260863 A1Published application
Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
AssigneeSolar-Tectic LLC
InventorsPraveen Chaudhari, Ashok Chaudhari
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Abstract
A method is provided for depositing textured wide bandgap materials, such as polymers or perovskites, on a textured transparent conducting oxide on inorganic thin-film, which serves as a recombination layer, or interfacial conducting layer (ICL), for tandem or multi junction solar cells.
Claims12
A method of making a thin-film tandem solar cell comprising the steps of:
- depositing a textured buffer layer on glass, followed by deposition of an inorganic film from a metal-semiconductor eutectic alloy film on said buffer layer, said metal segregating to the surface of said film, followed by introducing O2 to the metal thereby transforming the metal to a metal oxide, and depositing a semiconductor film on said metal oxide to form a tandem solar cell.
Dependencies are inferred from the claim text.