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US 2016/0260861 A1Published application
Multiband double junction photodiode and related manufacturing process
AssigneeSTMicroelectronics S.r.l.
InventorsMassimo Cataldo MAZZILLO, Antonella SCIUTO, Dario SUTERA
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Abstract
A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.
Claims21
A device, comprising:
- a photodiode, the photodiode including:
- a first layer of semiconductor material;
- a second layer of semiconductor material on the first layer of semiconductor material;
- a first contact on the first layer of semiconductor material;
- a second contact on the layer of semiconductor material;
- a first photodiode junction at a first interface of the first contact and the first layer of semiconductor material;
- a second photodiode junction at a second interface of the second contact and the second layer of semiconductor material;
- a first electrode electrically coupled to the first layer of semiconductor material;
- and
- a second electrode electrically coupled to the first and second contacts, in response to a first selected voltage applied between the first and second electrodes the photodiode is sensitive to light in a first wavelength band and substantially insensitive to light in a second wavelength band, and in response to a second selected voltage applied between the first and second electrodes the photodiode is sensitive to light in the second wavelength band.
7 more elements
A photodiode, comprising:
- a first layer of semiconductor material;
- a second layer of semiconductor material on the first layer of semiconductor material;
- a first electrode positioned over the first layer of semiconductor material;
- a second electrode positioned below the first layer of semiconductor material;
- and
- an aperture in the first electrode that allows light to pass to a light receiving area of the first layer of semiconductor material and to a light receiving area of the second layer of semiconductor material below the aperture, a depletion region of the first layer of semiconductor material does not extend to the light receiving area of the first layer of semiconductor material when a first voltage is applied between the first and second electrodes and the depletion region of the first layer of semiconductor material extends to the light receiving area of the first layer of semiconductor material when a second voltage is applied between the first and second electrodes.
3 more elements
A method, comprising:
- receiving light into a light sensitive region of a photodiode via an aperture in a first electrode of the photodiode;
- generating a first photocurrent in the photodiode by applying a first voltage between the first electrode and a second electrode of the photodiode, a magnitude of the first photocurrent being indicative of an intensity of the light in a first wavelength band;
- and
- generating a second photocurrent in the photodiode by applying a second voltage between the first and second electrodes, a magnitude of the second photocurrent being indicative of an intensity of the light in a second wavelength band.
1 more element
Dependencies are inferred from the claim text.