Trench semiconductor device having multiple active trench depths and method

A semiconductor device comprising:

• a region of semiconductor material comprising a semiconductor layer adjoining a semiconductor substrate, the semiconductor layer defining a major surface, wherein the semiconductor layer has a first dopant concentration and the semiconductor substrate has a second dopant concentration greater than the first dopant concentration;
• a first trench extending from a first portion of the major surface into the region of semiconductor material, wherein the first trench extends to a first depth, and wherein the first trench has a first width;
• a second trench extending from a second portion of the major surface into the region of semiconductor material to a second depth, wherein the second trench has a second width less than the first width, and wherein the first depth is greater than the second depth to define a trench depth difference;
• a third trench extending from a third portion of the major surface into the region of semiconductor material to a third depth, wherein the third trench has a third width, and
• a first conductive material within the second trench and separated from the region of semiconductor material by a first dielectric region;
• and
• a second conductive material adjoining a fourth portion of the major surface, wherein the second conductive material is configured to provide a Schottky barrier.

A method of forming a Schottky semiconductor device comprising:

• providing a region of semiconductor material comprising a semiconductor layer adjoining a semiconductor substrate, the semiconductor layer defining a major surface, wherein the semiconductor layer has a first dopant concentration and the semiconductor substrate has a second dopant concentration greater than the first dopant concentration;
• providing a first trench extending from a first portion of the major surface into the region of semiconductor material, wherein the first trench extends to a first depth, and wherein the first trench has a first width;
• providing a first active trench extending from a second portion of the major surface into the region of semiconductor material to a second depth, wherein the first active trench has a second width less than the first width;
• providing a second active trench extending from a third portion of the major surface into the region of semiconductor material to a third depth, wherein the second active trench has a third width less than the first width;
• and
• providing a conductive material adjoining a fourth portion of the major surface, wherein the conductive material is configured to provide a Schottky barrier.