US 2016/0260838 A1 · SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Abstract

A semiconductor device includes first and second insulators over a substrate, a semiconductor over the second insulator, first and second conductors over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor and the second conductor. The semiconductor includes first, second, and third regions. The first region overlaps with the third conductor with the third insulator and the fourth insulator positioned therebetween. The second region overlaps with the third conductor with the first conductor, the fourth insulator, and the fifth insulator positioned therebetween. The third region overlaps with the third conductor with the second conductor, the fourth insulator, and the fifth insulator positioned therebetween. The fourth insulator is in contact with a side surface of the fifth insulator in a region overlapping with the semiconductor.

Claims24

Dependent claims

A semiconductor device comprising:

a first insulator over a substrate;
a second insulator over the first insulator;
a semiconductor over the second insulator;
a first conductor and a second conductor over the semiconductor;
a third insulator over the semiconductor;
a fourth insulator over the third insulator;
a third conductor over the fourth insulator;
and
a fifth insulator over the first insulator, the first conductor and the second conductor,
wherein the semiconductor includes a first region, a second region, and a third region,
wherein the first region is overlapped with the third conductor with the third insulator and the fourth insulator positioned therebetween,
wherein the second region is overlapped with the third conductor with the first conductor, the fourth insulator, and the fifth insulator positioned therebetween,
wherein the third region is overlapped with the third conductor with the second conductor, the fourth insulator, and the fifth insulator positioned therebetween, and
wherein the fourth insulator includes a region in contact with a side surface of the fifth insulator.

11 more elements

A method for manufacturing a semiconductor device, comprising:

forming a first insulator;
forming a second insulator over the first insulator;
forming a semiconductor over the second insulator;
forming a multilayer film including the second insulator and the semiconductor by etching a part of the second insulator and a part of the semiconductor;
forming a first conductor over the multilayer film;
forming a second conductor and a third conductor by etching a part of first conductor;
forming a fourth conductor over the second conductor and the third conductor;
forming a third insulator over the fourth conductor and the first insulator;
dividing the fourth conductor into a fifth conductor and a sixth conductor by forming an opening, through which the semiconductor and the first insulator are exposed, in the third insulator and the fourth conductor;
forming a fourth insulator over the third insulator, the fifth conductor, the sixth conductor, and the semiconductor;
forming a fifth insulator by selectively etching a part of the fourth insulator so that a region in contact with the semiconductor is left and a part of a side surface of the third insulator is exposed;
forming a sixth insulator over the fifth insulator and the third insulator;
and
forming a seventh conductor over the sixth insulator,
wherein each of the second insulator and the fourth insulator contains at least one element contained in the semiconductor other than oxygen.

12 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method of the same

Life of this patent

Semiconductor device and manufacturing method of the same

Life of this patent

Abstract

Claims24