Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device

An oxide semiconductor film comprising:

• In;
• M;
• Zn;
• and
• a first region overlapping with a first conductive film with a first insulating film positioned therebetween,
• wherein the first region comprises a region in which a peak value of a density of shallow defect states at an interface between the oxide semiconductor film and the first insulating film is less than 1×1013 cm−2 eV−1, and
• wherein M is Al, Ga, Y, or Sn.

An oxide semiconductor film comprising:

• In;
• M;
• Zn;
• a first region overlapping with a first conductive film with a first insulating film positioned therebetween;
• and
• a second region overlapping with a second conductive film with a second insulating film positioned therebetween,
• wherein the first region comprises a region in which a peak value of a first density of shallow defect states at an interface between the oxide semiconductor film and the first insulating film is less than 1×1013 cm−2 eV−1,
• wherein the second region comprises a region in which a peak value of a second density of shallow defect states at an interface between the oxide semiconductor film and the second insulating film is less than 1×1013 cm−2 eV−1, and
• wherein M is Al, Ga, Y, or Sn.