Nitride semiconductor device having aluminum oxide film and a process for producing the same

Abstract

A transistor primarily made of nitride semiconductor materials and a passivation film of Al2O3, and a process for producing the same are disclosed. The transistor, which is the type of the high-electron mobility transistor (HEMT), has a channel layer and a barrier layer sequentially grown on a semiconductor substrate. The barrier layer in a surface thereof is covered with Al2O3 film. A feature of the transistor of the invention is that Al2O3 film is formed by the atomic layer deposition (ALD) at relatively lower deposition temperature lower than 150° C., which leaves methyl groups and/or carbonyl groups in substantial concentrations measured by the Fourier transform infrared spectroscopy (FTIR).

Dependencies are inferred from the claim text.