Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency amplifier
AssigneeFujitsu Limited
InventorsMasato NISHIMORI, Tatsuya HIROSE, Atsushi YAMADA
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AssigneeFujitsu Limited
InventorsMasato NISHIMORI, Tatsuya HIROSE, Atsushi YAMADA
Estimating the term…
A semiconductor device is configured including a p-type back barrier layer provided over a substrate and formed front a p-type nitride semiconductor in which Mg or Zn is doped, a nitride semiconductor stacked structure provided over the p-type back barrier layer, the nitride semiconductor stacked structure including an electron transit layer and an electron supply layer, a source electrode, a drain electrode and a gate electrode provided over the nitride semiconductor stacked structure, and a groove extending to the p-type back barrier layer.
A semiconductor device, comprising:
A power supply apparatus, comprising:
A high-frequency amplifier, comprising:
A fabrication method for a semiconductor device, comprising:
Dependencies are inferred from the claim text.