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US 2016/0260818 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSumitomo Electric Device Innovations, Inc.
InventorMasahiro Nishi
Life of this patent
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Abstract
A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.
Claims11
1-17. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor layer on a substrate;
- forming a first resist on the semiconductor layer;
- forming a second resist on the first resist;
- forming a first opening pattern of the first resist and a second opening pattern of the second resist, the first opening pattern and the second opening pattern being overlapped with each other;
- performing isotropic etching on the semiconductor layer through the first opening pattern and the second opening pattern;
- and
- forming an electrode on a surface of the semiconductor layer which is exposed from the first opening pattern and the second opening pattern.
4 more elements
Dependencies are inferred from the claim text.