Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorMasaki SAKAI
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Abstract
According to an embodiment, a semiconductor device includes a semiconductor layer, a first metal layer formed over the semiconductor layer, a barrier film formed over the first metal layer and having an ionization tendency lower than an ionization tendency of the first metal layer, a second metal layer formed over the barrier film and having an ionization tendency higher than an ionization tendency of the metal film, and a third metal layer formed over the second metal layer and having an ionization tendency lower than an ionization tendency of the second metal layer.
Claims20
A semiconductor device, comprising:
- a semiconductor layer;
- a first metal layer on the semiconductor layer;
- a barrier film on the first metal layer and having an ionization tendency lower than an ionization tendency of the first metal layer;
- a second metal layer formed on the barrier film and having an ionization tendency higher than the ionization tendency of the barrier film;
- and
- a third metal layer on the second metal layer and having an ionization tendency lower than the ionization tendency of the second metal layer.
A semiconductor device, comprising:
- a semiconductor layer;
- a first metal layer on the semiconductor layer and comprising aluminum;
- a barrier film on first metal layer, and including at least one material selected from a group consisting of titanium, titanium nitride, tungsten, tungsten nitride, molybdenum, nickel, and copper;
- a second metal layer on the barrier layer and comprising aluminum;
- and
- a plated metal film on the second metal layer and comprising nickel.
A method of manufacturing a semiconductor device, comprising:
- forming a first metal layer on a semiconductor layer;
- forming a barrier film on the first metal layer, the barrier film having an ionization tendency lower than an ionization tendency of the first metal layer;
- forming a second metal layer on the barrier film, the second metal layer having an ionization tendency higher than the ionization tendency of the barrier film;
- and
- forming a third metal layer on the second metal layer and having an ionization tendency lower than the ionization tendency of the second metal layer.
Dependencies are inferred from the claim text.