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US 2016/0260804 A1Published application
Artificially engineered iii-nitride digital alloy
AssigneeLehigh University
InventorsNelson TANSU, Wei SUN, Chee-Keong TAN
Life of this patent
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Abstract
A material structure and system for generating a III-Nitride digital alloy.
Claims20
A method of forming a III-Nitride quaternary digital alloy (“DA”) of AlGaInN comprising:
- generating a periodic structure of closely separated binary alloy layers, each of said binary alloy layers comprising one of AlN, GaN and InN, wherein each of said binary alloy layers has a respective thickness of 1-2 monolayers (“ML”s) and said periodic structure of binary alloy layers has a total thickness of between 10-50 periods.
A method of forming a III-Nitride ternary DA comprising:
- generating a periodic structure of closely separated binary alloy layers of a first type and a second type, each of said first type of binary alloy layer comprising one of AlN, GaN and InN and each of said second type of binary alloy layer comprising one of AlN, GaN and InN, wherein the first type of binary alloy layer is different from the second type of binary alloy layer and each of said binary alloy layers has a respective thickness of 1-4 MLs and said periodic structure of binary alloy layers has a total thickness of between 10-50 periods.
A III-Nitride quaternary DA of AlGaInN comprising a periodic structure of closely separated binary alloy layers, each of said binary alloy layers comprising one of AlN, GaN and InN, wherein each of said binary alloy layers has a respective thickness of 1-2 MLs and said periodic structure of binary alloy layers has a total thickness of between 10-50 periods.
Dependencies are inferred from the claim text.