Power Semiconductor Device Including Trench Gate Structures with Longitudinal Axes Tilted to a Main Crystal Direction

A method of manufacturing a semiconductor device, the method comprising:

• forming, in a semiconductor substrate from crystalline semiconductor material with a first main crystal direction parallel to a horizontal plane, trenches with a longitudinal extension greater than a width in the horizontal plane, wherein longitudinal axes of the trenches are tilted to the first main crystal direction by a tilt angle of at least 2 degree and at most 30 degree in the horizontal plane;
• heating up the semiconductor substrate in an inert atmosphere to a temperature at which atoms of the semiconductor material rearrange along main crystal planes, wherein redeposition regions of the semiconductor material form sidewalls steps compensating an angular misalignment between the longitudinal axis of the trench and the main crystal planes;
• and
• forming a sacrificial layer incorporating the redeposition regions.